Effect of Magnetostatic Interactions on Twin Boundary Motion in NiMnGa Magnetic Shape Memory Alloy


We have a tendency to investigated the effect of magnetostatic interactions on the sector-induced reorientation of martensite variants in Ni50.0Mn27.5Ga2two.5. The reorientation, achieved by sweeping a single Sort-II twin boundary along the sample, was triggered by a twinning stress of regarding 0.1 MPa. But, depending on the initial position of the dual boundary, the magnetic field providing the crucial stress varied within the range 832 kA/m. By taking under consideration the variants sizes and their mutual interactions, we have a tendency to explained the observed dependence of the switching field on the location of the boundary. The resulting match between model predictions and measurements illustrates the basic role played by demagnetization effects and magnetostatic interactions in magnetic shape memory effect.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Effect of Switched-Capacitor CMFB on the Gain of Fully Differential OpAmp for Design of Integrators - 2018ABSTRACT:Switched capacitor common-mode feedback (SC-CMFB) may be a common technique for stabilization of
PROJECT TITLE :Effect of circulating current on input linecurrent of 12-pulse rectifier with activeinter-phase reactor - 2016ABSTRACT:This study analyses quantitatively the result of circulating current's amplitude and phase on
PROJECT TITLE :Low Stress Cycle Effect in IGBT Power Module Die-Attach Lifetime ModelingABSTRACT:Operational management for reliability of power electronic converters requires sensitive condition monitoring and accurate lifetime
PROJECT TITLE :Validation of Cross Sections for Monte Carlo Simulation of the Photoelectric EffectABSTRACT:Several total and partial photoionization cross section calculations, based mostly on both theoretical and empirical approaches,
PROJECT TITLE :Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell StabilityABSTRACT:During this paper, we have a tendency to present a variability-aware three-D mixed-mode

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry