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A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

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PROJECT TITLE :

A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics

ABSTRACT:

A easy analytical low-field electron mobility model to be used for technology pc-aided style of skinny-body MOSFETs based mostly on III-V compound semiconductors is presented. The scattering sources accounted for within the model are Coulomb centers, lattice vibrations (i.e., phonons), and surface roughness. The dependence of the skinny-body effective thickness on the transverse electric field is calculated through one-D Schrödinger-Poisson numerical simulations and is introduced in the model by suggests that of an applicable analytical function. Then, the free-electron density distribution is determined by considering each quantization effects and oxide-semiconductor interface traps. The model is calibrated on the experimental knowledge collected on In0.53Ga0.47As-on-InP thin-body MOSFETs that includes body thicknesses as low as five nm. In particular, the model accurately reproduces CG-VGS characteristics, effective mobility against inversion layer charge plots, and IDS-VGS curves at low VDS.


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A TCAD Low-Field Electron Mobility Model for Thin-Body InGaAs on InP MOSFETs Calibrated on Experimental Characteristics - 4.9 out of 5 based on 78 votes

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