Mist-CVD Grown Sn-Doped -Ga2O3 MESFETs


This paper demonstrates the utilization of cost-effective resolution-processed α-Ga2O3 thin films (TFs) for electronic device applications. MESFETs based mostly on AgOx Schottky diode (SD) gates were fabricated on highly crystalline Sn-doped α-Ga2O3 TFs, grown by mist chemical vapor deposition at atmospheric pressure and a substrate temperature of solely 400°C. The rectification ratio and reverse breakdown voltage of typical SDs were six × 106 and nineteen.half dozen V, respectively. The ON-OFF ratio of the corresponding transistors was two × 107. The MESFETs that could withstand drain voltages of up to 48 V were also realized.

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