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Quantifying edge and peripheral recombination losses in industrial silicon solar cells

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PROJECT TITLE :

Quantifying edge and peripheral recombination losses in industrial silicon solar cells

ABSTRACT:

A finite-element model is built to represent a silicon solar cell as an enormous network of diodes with completely different saturation current densities, with focus on the definition of three recombination parameters to explain the vicinity of the wafer edges. By simulating the voltage distribution across the cell plane, also because the cell current-voltage characteristics at totally different illumination intensities, these peripheral and edge recombination parameters are extracted for varied cell varieties and processes by comparison with corresponding measurement data. It is noted that the monocrystalline silicon PERC cells studied have considerably lower peripheral and second diode edge recombination compared with Al-BSF cells. For the Al-BSF cells studied, there can be ~zero.25p.c-0.six% absolute potency gain if the peripheral and edge recombination sources are eliminated.


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Quantifying edge and peripheral recombination losses in industrial silicon solar cells - 4.9 out of 5 based on 24 votes

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