PROJECT TITLE :
Capacitance Modeling in III–V FinFETs
We present a physics-based mostly model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacitance with applied gate voltage together with the steplike behavior with sub-band population. The presented model is in glorious agreement with the self-consistent Schrödinger-Poisson simulation data of InGaAs channel double-gate MOSFET.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here