PROJECT TITLE :

Capacitance Modeling in III–V FinFETs

ABSTRACT:

We present a physics-based mostly model of charge density and capacitance for III-V channel double-gate nMOSFETs. The developed model accurately accounts for the impact of quantum capacitance on gate capacitance with applied gate voltage together with the steplike behavior with sub-band population. The presented model is in glorious agreement with the self-consistent Schrödinger-Poisson simulation data of InGaAs channel double-gate MOSFET.


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