PROJECT TITLE :
Noise-Induced Resistance Broadening in Resistive Switching Memory—Part I: Intrinsic Cell Behavior
Resistive-switching memory (RRAM) is attracting a widespread interest for its outstanding properties, like low power, high speed, and smart endurance. A crucial concern for RRAM is this fluctuation, which induces vital broadening of resistance levels in single-bit and multilevel applications. This paper addresses low-frequency fluctuations focusing on one/f and random telegraph noise contributions in intrinsic, i.e., typical, cells. This fluctuations are studied in each the time and frequency domains, and therefore the analytical models are presented to predict the resistance broadening for different RRAM states. Finally, the resistance dependence of noise and broadening is studied with the support of a three-D finite-part model.
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