Nonvolatile Logic and In Situ Data Transfer Demonstrated in Crossbar Resistive RAM Array


For the primary time, nonvolatile logic, memory, and communication are experimentally demonstrated all at intervals a crossbar resistive random access memory (RRAM) array through the state interaction among RRAM cells. With all the array cells initialized to high resistance states, OR and NOT logic are measured as a signal of functional completeness for computation, with input and output knowledge directly stored in the array. Following the same computation paradigm, in situ information transfer within the crossbar RRAM array is realized. The cell-to-cell communication is proved economical by the measured resistance evolution of a row of RRAM cells throughout consecutive knowledge transfer. Reliability characteristics, as well as endurance, retention, and disturbance are scrutinized for the robust computing systems.

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