Degradation Analysis of Facet Coating in GaAs-Based High-Power Laser Diodes


The facet coating of GaAs-based laser diodes (LDs) stressed by constant current was studied thoroughly using focused ion beam, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy techniques. Our analysis found that, for Si/Al2O3 side coating, silicon near the active area exposed to high laser intensity becomes diffused, creating it thicker than the Si layer outside the active area. Oxygen diffused into the Si layer and the Si layer got oxidized. Such change of side-coating thickness and composition causes the side reflectivity to fluctuate and carriers to recombine nonradioactively and eventually result in catastrophic optical harm. We have a tendency to conclude that the performance of LDs may be improved by optimizing their facet coating.

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