A Correlation Model for Nonstationary Time-Variant On-Body Channels


The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor’s (pHEMT) substrate and epilayer regions are extracted to develop a three-D finite-part-technique thermal model. The thermal characterization is based on electrical gate-metal-finger temperature measurements of a customized GaAs pHEMT take a look at structure. Heat flow from an integrated skinny-film resistor is shown to be sensitive to the device’s substrate thermal conductivity, whereas heat flow from the device’s channel is most significantly tormented by the epilayer region thermal conductivity. These observations are employed in the formulation of the thermal parameter extraction technique, which is a useful and convenient device modeling tool that can be integrated into an engineering design flow. Specific knowledge concerning the semiconductor material fabrication method, which may be unavailable to the planning engineer, isn't needed for correct thermal characterization; this is the overriding advantage of the technique presented.

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