Modeling of Edge-Emitting Lasers Based on Tensile Strained Germanium Microstrips


During this paper, we gift a thorough modeling of a grip-emitting laser based on strained germanium (Ge) microstrips. The full-band structure of the tensile strained Ge layer enters the calculation of optical properties. Material gain for strained Ge is utilized in the 2D simulation of the carrier transport and of the optical field at intervals a cross section of the microstrips orthogonal to the optical cavity. We have a tendency to study optoelectronic properties of the device for 2 totally different styles. The simulation results are very promising as they show feasible ways in which toward Ge emitter devices with lower threshold currents and better potency as printed insofar.

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