A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs


A comprehensive statistical investigation of the increase in resistance associated with charge trapping in atomistic simulations is presented. A wide range of doping densities and mesh spacing are considered for each classical and quantum formalisms. A doping-dependent correction factor to modify the mobility model for the atomistic simulations is proposed to suppress the error related to the fictional charge trapping. The validity of the new mobility model is tested within the statistical simulations of the transistors corresponding to twenty-nm bulk CMOS and 14-nm FinFET transistors.

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