PROJECT TITLE :
Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes
High-performance ultraviolet (UV) Schottky photodiodes obtained by growing Pd Schottky contacts on the sol-gel-derived n-ZnO thin films deposited on n-Si substrates have been reported during this paper. The current-voltage ( $I$ – $V$ ) measurements of the as-fabricated Schottky photodiodes show an wonderful area temperature contrast ratio (i.e., the ratio of the present underneath UV illumination to the dark current) of $sim five.332times 10^3$ and responsivity (i.e., the parameter characterizing the sensitivity of the device to the UV light) of $sim eight.thirty-nine$ A/W at −five V reverse bias voltage, respectively; when the device is illuminated by an UV supply of $sim 650~mu textW$ output power at $sim 365$ nm. The measured area temperature contrast ratio and responsivity are believed to be the best among the reported values within the literature for ZnO skinny film-primarily based Schottky photodiodes using sol-gel technique.
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