Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO2-Based p-n Junctions


This paper reports on the influence of junction geometry on the determination of the rectification performance of nanostructured titanium dioxide (TiO2)-based p-n homojunctions. Two types of p-n junction devices with totally different junction area/geometry were fabricated. Sol–gel grown undoped TiO2 nanoparticle layer was used because the p-kind facet in both the cases. Electrochemically grown TiO2 nanotube array was used as the n-type side in one junction, while thermally grown n-TiO2 skinny film was utilized in another. It was found that, thanks to unique advantage of excessively massive junction space, p-TiO2/n-TiO2 nanotube device offered a dramatically improved ideality issue (4) and a rectification issue (1093) compared with its p-TiO2/n-TiO2 (thermally grown) counterpart (17 and thirty four, respectively). The a pair of-D distribution likelihood of the depletion region within the case of the first device was empirically correlated with the experimental findings and was supported by the corresponding $C$ – $V$ measurement results.

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