PROJECT TITLE :
Environment-Dependent Bias Stress Stability of P-Type SnO Thin-Film Transistors
We have a tendency to investigate the consequences of environmental water and oxygen on the electrical stability of p-kind tin monoxide (SnO) skinny-film transistors (TFTs). Under negative gate bias stresses, there was a larger threshold voltage shift (ΔVth) in the devices that had been exposed to water than that for the devices that remained unexposed. However, underneath positive gate bias stresses, devices that had been exposed to water exhibited approximately the identical ΔVth as what was observed in devices that had not been exposed. This phenomenon is attributed to the generation of residual-water-related hole traps near the valence band edge in SnO TFTs. Moreover, we have a tendency to observed that the environmental oxygen partial pressure had terribly very little effect on the electrical stability of p-kind SnO TFTs under either negative or positive gate bias stresses. The weak chemisorption of oxygen molecules caused by high ionization energy will be a plausible mechanism for the oxygen insensitivity of negative gate bias-stress-induced instabilities, and also the low electron concentration close to the exposed back-channel of p-kind SnO TFTs can attainable justify the oxygen insensitivity of positive gate bias-stress-induced instabilities.
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