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Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation

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PROJECT TITLE :

Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation

ABSTRACT:

Continuous CMOS logic switching leads to a consecutive series of gate bias temperature instability and drain (OFF-state) stress. We have a tendency to conjointly show that the asymmetric stress condition results in a preferential breakdown at the drain aspect and that neither gate-solely nor drain-solely stress can reproduce this behavior. The findings are verified by the voltage ratio method also dc current-voltage measurements and are caused by trapping and detrapping under the alternating electric field.


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Experimental Proof of the Drain-Side Dielectric Breakdown of HKMG nMOSFETs Under Logic Circuit Operation - 4.9 out of 5 based on 15 votes

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