Band Structure, Optical Transition, and Optical Gain of Type-II InAs(N)/GaSb Quantum Wells Laser Diodes Modeled Within 16-Band and 14-Band $kp$ Model


We have a tendency to have used both sixteen-band and fourteen-band $kp$ Hamiltonians to analyze electronic band-structure, optical gain and transitions of 2 kind-II quantum wells with InAs and InAs0.98N0.02 because the active layers surrounded by a GaSb layer, respectively. The obtained results are discussed within the context of the importance of the contribution of the p-sort conduction band nonparabolicity. The results are given explicitly in the $[001]$ and $[111]$ directions. We have additionally reported a comparison between the results obtained within the sixteen-band and 10-band $kp$ models in terms of optical gain and threshold current density for $[111]$ -oriented laser structure. For typical carrier concentration of 8 $times ten^12~rm cm^-2$ at three hundred K, we tend to achieved an emission wavelength of $sim two.55,mu rm m$ with a peak gain of order $140zero;rm cm^-1$ obtained inside sixteen-band $kp$ model while for the 10-band $kp$ model, a peak gain of order $564;rm cm^-1$ is reached providing an emission wavelength at $sim 2.04;mu rm m$ .

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