Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High- $k$ /Metal Gate CMOS Process

1 1 1 1 1 Rating 4.90 (78 Votes)

PROJECT TITLE :

Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High- $k$ /Metal Gate CMOS Process

ABSTRACT:

A pMOS device with an embedded silicon-controlled rectifier to boost its electrostatic discharge (ESD) robustness has been proposed and implemented during a twenty eight-nm high- $k$ /metal gate CMOS method. An extra p-kind ESD implantation layer was added into the pMOS to understand the proposed device. The experimental results show that the proposed device has the advantages of high ESD robustness, low holding voltage, low parasitic capacitance, and sensible latchup immunity. With higher performances, the proposed device was more suitable for ESD protection in a very sub-fifty-nm CMOS process.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High- $k$ /Metal Gate CMOS Process - 4.9 out of 5 based on 78 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...