Black Phosphorus p-MOSFETs With 7-nm HfO2 Gate Dielectric and Low Contact Resistance


We tend to report record contact resistance and transconductance in regionally back-gated black phosphorus p-MOSFETs with seven-nm thick HfO2 gate dielectrics. Devices with effective gate lengths, $L_mathrm mathbf eff$ , from zero.55 to 0.17 $mu textm$ were characterized and shown to possess contact resistance values as low as $1.14~pm ~zero.05~Omega $ -mm. Additionally, devices with $L_mathrm mathbf eff= zero.seventeen~mu textm$ displayed extrinsic transconductance exceeding 250 $mu textS$ / $mu textm$ and ON-state current approaching $300~mu textA$ / $mu textm$ .

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