Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application


We report that management over the grain size and lateral growth of monolayer MoS2 film, yielding an identical giant-space monolayer MoS2 film, can be achieved by submitting the SiO2 surfaces of the substrates to oxygen plasma treatment and modulating substrate temperature in chemical vapor deposition (CVD) method. Scanning electron microscopy and atomic force microscopy images and Raman spectra revealed that the MoS2 lateral growth may be controlled by the surface treatment conditions and process temperatures. Moreover, the obtained monolayer MoS2 films showed glorious scalable uniformity covering a centimeter-scale SiO2 /Si substrates, that was confirmed with Raman and photoluminescence mapping studies. Transmission electron microscopy measurements revealed that the MoS2 film of the monolayer was largely single crystalline in nature. Back-gate field effect transistors based mostly on a CVD-grown uniform monolayer MoS2 film showed a smart current on/off ratio of ∼106 and a field effect mobility of 7.23 cm2/V·s. Our new approach to growing MoS2 films is anticipated to advance studies of MoS2 or different transition metal dichalcogenide material growth mechanisms and to facilitate the mass production of uniform high-quality MoS a pair of films for the commercialization of a variety of applications.

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