Trap-Profile Extraction Using High-Voltage Capacitance–Voltage Measurement in AlGaN/GaN Heterostructure Field-Effect Transistors With Field Plates


A measurement methodology involving high-voltage capacitance–voltage ( $C$ – $V$ ) was proposed to determine the trapping profile of a stressed AlGaN/GaN heterostructure field-effect transistor (HFET). Comparing the curves between initial (device without stress) and stressed (device with stress) $C$ – $V$ measurements revealed that the transient behavior was dominated by ionized acceptor-like traps, and the trapping profile within the high drain-to-source OFF-state stressed AlGaN/GaN HFET could be deduced.

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