PROJECT TITLE :
AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss
A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to −12.8 dB. The device exhibits high crosstalk suppression of −50 dB on a standard Si-substrate (10 $Omega $ cm). X-ray diffraction, (scanning) transmission electron microscopy, and energy dispersive X-ray spectroscopy studies correlate the signal quality with $c$ -axis orientation of aluminum nitride films on interdigitated transducer finger electrodes. Finite-element method simulations are in good agreement with the electric measurements and show typical Rayleigh particle displacement.
Did you like this research project?
To get this research project Guidelines, Training and Code... Click Here