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AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

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PROJECT TITLE :

AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss

ABSTRACT:

A CMOS compatible AlN/SiO2/Si3N4/Si(100) surface acoustic wave (SAW) device has been fabricated and will be compared with standard AlN/SiO2-based devices. The presented filter demonstrates high potential for CMOS integrated high-frequency SAW devices. The filter insertion loss could be improved to −12.8 dB. The device exhibits high crosstalk suppression of −50 dB on a standard Si-substrate (10 $Omega $ cm). X-ray diffraction, (scanning) transmission electron microscopy, and energy dispersive X-ray spectroscopy studies correlate the signal quality with $c$ -axis orientation of aluminum nitride films on interdigitated transducer finger electrodes. Finite-element method simulations are in good agreement with the electric measurements and show typical Rayleigh particle displacement.


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AlN/SiO2/Si3N4/Si(100)-Based CMOS Compatible Surface Acoustic Wave Filter With −12.8-dB Minimum Insertion Loss - 4.8 out of 5 based on 72 votes

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