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The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel

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ABSTRACT:

The floating-body effect and impact ionization generate excess holes that are amplified by the parasitic bipolar junction transistor (BJT) in silicon-on-insulator lateral double-diffused MOSFETs (SOI-LDMOS) that degrade the transistor performance. In this paper, a novel silicon germanium (SiGe) window LDMOS on SOI (SW-SOI) is reported where the buried oxide under the channel region becomes thinner and a SiGe window has been replaced in order to reduce the hole concentration in the channel and control the BJT effect significantly. The novel features of an SW-SOI are simulated and compared with a conventional LDMOS on SOI (C-SOI). In addition, reduced self-heating effects and higher breakdown voltage have been achieved as compared with the C-SOI. Hence, this paper illustrates the benefits of the high performance SW-SOI device over a conventional one and expands the application of SOI MOSFETs to high temperature.


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The Best Control of Parasitic BJT Effect in SOI-LDMOS With SiGe Window Under Channel - 4.9 out of 5 based on 18 votes

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