An edge termination method, referred to as space-modulated junction termination extension (SMJTE) combined with a mesa structure, is presented for ultrahigh-voltage p-i-n diodes in 4H-SiC. Numerical device simulations have been performed for over 15-kV-class 4H-SiC p-i-n diodes with the proposed edge termination. The structure exhibits a high breakdown capability with an improved tolerance for the deviation of impurity dose in the JTE region. Unlike conventional multi-implantation, the proposed termination technique utilizes a single-step implantation with a single mask. A desired laterally tapered doping profile is achieved by fragmenting a conventional JTE region using relatively wide spaces. The simple process of the proposed edge termination makes it applicable to fabrication of various high-voltage devices in 4H-SiC.
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