This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide $(hbox{HfO}_{2})$ and aluminum oxide $(hbox{Al}_{2}hbox{O}_{3})$ layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal–oxide–semiconductor model and results from capacitance–voltage measurements, the density of fixed charges $(N_{f})$ and the density of interface traps $(D_{rm it})$ at the $hbox{HfO}_{2}hbox{/}hbox{Si}$ and $hbox{Al}_{2}hbox{O}_{3}hbox{/}hbox{Si}$ interfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces.

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PROJECT TITLE :Indium–Tin–Oxide Thin-Film Transistors With In Situ Anodized Ta2O5 Passivation LayerABSTRACT:An in situ passivation process for the fabrication of high-performance indium-tin-oxide thin-film transistors (ITO
PROJECT TITLE :Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTsABSTRACT:Radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) is studied with 2-MeV protons,
PROJECT TITLE :ICP-CVD SiN Passivation for High-Power RF InAlGaN/GaN/SiC HEMTABSTRACT:High-frequency Metal Insulator Semiconductor High-Electron-Mobility Transistors (MIS HEMTs) were fabricated on quaternary InAlGaN/AlN/GaN heterostructures,
PROJECT TITLE :Impact of Passivation Conditions on Characteristics of Bottom-Gate IGZO Thin-Film TransistorsABSTRACT:The electrical characteristics of bottom-gate amorphous indium gallium zinc oxide (a-IGZO) skinny-film transistors
PROJECT TITLE :Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate DielectricABSTRACT:Plasma nitridation is used for nitrogen incorporation in Ga2O3(Gd2O3)

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