Oxide-based thin-film transistors (TFTs) with a lateral in-plane electrode are self-assembled on paper substrates, and the electrical modulation effect of the in-plane electrode is investigated. A $hbox{SiO}_{2}$-based solid-electrolyte film with high specific capacitance is used as the gate dielectric, and the operation voltage is reduced to less than 2.0 V. The threshold voltage $(V_{rm th})$ of such paper TFTs is tuned from $-$0.98 to 0.94 V by different voltage biases on the in-plane electrode. The threshold voltage shift $(Delta V_{rm th})$ can be described by $Delta V_{rm th} = -(C_{G2}/C_{G1})V_{G2}$, where $C_{G2}$ and $C_{G1}$ are the in-plane electrode and bottom-gate specific capacitance values. High electrical performance with a current on/off ratio of $hbox{6} times hbox{10}^{5} sim hbox{10}^{6}$ , a subthreshold swing of 0.14 $sim$ 0.19 V/dec, and a mobility of $hbox{8.64} sim hbox{9.45} hbox{cm}^{2}/hbox{V}cdot hbox{s}$ is obtained at different in-plane electrode voltage biases. Such low-voltage paper TFTs are promising for low-cost and portable electronics.

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