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High-Performance Pentacene-Based Thin-Film Transistors and Inverters With Solution-Processed Barium Titanate Insulators

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ABSTRACT:

High-performance pentacene-based thin-film transistors and inverters with solution-processed barium titanate (BTO) insulators are demonstrated. The current–voltage characteristics of the transistors show high mobility of 9.53 $hbox{cm}^{2}hbox{V}^{-1}hbox{s}^{-1}$ at smaller $V_{G} = -hbox{3.5} hbox{V}$ and $V_{D} = -hbox{5} hbox{V}$, a low threshold voltage of $-$1.5 V, and a subthreshold slope of 599 mV/dec. Large grain and small crystalline sizes are observed from atomic force microscopy images and X-ray diffraction analysis of pentacene films. The results are verified through Raman spectroscopy and a theoretical Marcus–Hush equation to understand the higher intermolecular coupling, resulting in easier carrier transports in pentacene molecules. In order to investigate the behavior of high-permittivity materials of BTO insulators in a logic circuit, simple and low-operating-voltage inverters are fabricated, and the gain is approximately 8.76 under a small operating voltage range from 0 to $-$5 V.


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High-Performance Pentacene-Based Thin-Film Transistors and Inverters With Solution-Processed Barium Titanate Insulators - 4.9 out of 5 based on 70 votes

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