Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers

1 1 1 1 1 Rating 4.80 (25 Votes)

PROJECT TITLE :

Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers

ABSTRACT :

We tend to have demonstrated an on the spot detection of 100–500zero eV electrons with a back-illuminated boron delta-doped hybrid silicon complementary metal–oxide–semiconductor imager operating in full depletion and a silicon electron-multiplying charge-coupled device (CCD) operating in partial depletion. The delta-doping molecular beam epitaxy increases sensitivity to low-energy electrons and improves low-energy electron detection threshold relative to standard solid-state detectors. We compare the gain measured in these two delta-doped devices with gain measured from control delta-doped CCDs.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers - 4.8 out of 5 based on 25 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...