PROJECT TITLE :
Direct Detection of 100–5000 eV Electrons With Delta-Doped Silicon CMOS and Electron-Multiplying CCD Imagers
We tend to have demonstrated an on the spot detection of 100–500zero eV electrons with a back-illuminated boron delta-doped hybrid silicon complementary metal–oxide–semiconductor imager operating in full depletion and a silicon electron-multiplying charge-coupled device (CCD) operating in partial depletion. The delta-doping molecular beam epitaxy increases sensitivity to low-energy electrons and improves low-energy electron detection threshold relative to standard solid-state detectors. We compare the gain measured in these two delta-doped devices with gain measured from control delta-doped CCDs.
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