Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region


We tend to developed an analytical model that's in a position to predict the evolution of the subthreshold slope variability associated with hot carrier (HC) stress. The model assumes that HC stress generates interface states with a Poisson distribution which the number of HC-induced interface states increases linearly with the HC-induced subthreshold slope variation. We have a tendency to validate the model by means that of extensive variability information sets collected on n-channel MOSFETs in forty five- and sixty five-nm CMOS technologies. Furthermore, we have a tendency to investigate the correlation between the brink voltage and also the subthreshold slope fluctuations so as to fully characterize their impact on the subthreshold current variability.

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