PROJECT TITLE :
A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs
We propose a replacement classical physics rigorous description of the drain current of long channel symmetric double-gate MOSFET with a doped body primarily based on one integral equation. Whereas existing descriptions are valid for limited ranges of doping concentrations, the equation presented here is valid for any doping concentration, as well as the therefore-called intrinsic body case. The description relies on a simple procedure to calculate the surface potential continuously from accumulation to inversion.
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