Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

1 1 1 1 1 Rating 4.75 (2 Votes)

PROJECT TITLE :

A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs

ABSTRACT :

We propose a replacement classical physics rigorous description of the drain current of long channel symmetric double-gate MOSFET with a doped body primarily based on one integral equation. Whereas existing descriptions are valid for limited ranges of doping concentrations, the equation presented here is valid for any doping concentration, as well as the therefore-called intrinsic body case. The description relies on a simple procedure to calculate the surface potential continuously from accumulation to inversion.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs - 4.5 out of 5 based on 2 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...