A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETs


We propose a replacement classical physics rigorous description of the drain current of long channel symmetric double-gate MOSFET with a doped body primarily based on one integral equation. Whereas existing descriptions are valid for limited ranges of doping concentrations, the equation presented here is valid for any doping concentration, as well as the therefore-called intrinsic body case. The description relies on a simple procedure to calculate the surface potential continuously from accumulation to inversion.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Rigorous Derivation of Imbalance Difference Theory for Modeling Radiated Emission ProblemsABSTRACT:The imbalance difference theory provides each physical insight and a robust technique for modeling the conversion
PROJECT TITLE :Rigorous calculation method for resonance frequencies in transmission line responsesABSTRACT:This study presents a new, generalised methodology for the calculation of resonance frequencies (RFs) in transmission
PROJECT TITLE : Joint Routing and Resource Allocation for Delay Minimization in Cognitive Radio Based Mesh Networks - 2014 ABSTRACT: This paper studies the joint design of routing and resource allocation algorithms in cognitive
PROJECT TITLE :Distance Bounding A Practical Security Solution for Real-Time Location Systems - 2013ABSTRACT:The need for implementing adequate security services in industrial applications is increasing. Verifying the physical
PROJECT TITLE :Rigorous Characterization of Carbon Nanotube Complex Permittivity Over a Broadband of RF FrequenciesABSTRACT:This study presents a comprehensive characterization of the frequency dependence of the effective complex

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry