Studies on Halo Implants in Controlling Short-Channel Effects of Nanoscale Ge Channel pMOSFETs


We have a tendency to report the impact of halo implants on short-channel effects of nanoscale Ge channel pMOSFETs in terms of various electrical device parameters such as threshold voltage ($V_rm TH$ ), subthreshold slope (SS), and drain-induced barrier lowering. The analysis relies on two-D surface potential approach taking under consideration the interface-trapped-charge density, the fastened-oxide-charge density, and halo implants. The upper worth of halo concentration also halo length shifts the $V_rm TH$ toward the more negative worth creating pMOS devices appropriate for circuit applications and additionally reduces SS. A design space defined by halo concentration and halo length for $V_rm TH$ virtually independent of channel length has been predicted for Ge pMOS devices with gate lengths down to 20 nm. Results obtained from our model show excellent agreement with numerical simulation data obtained using ATLAS and with reported experimental knowledge.

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