PROJECT TITLE :
Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices
We have a tendency to gift a self-consistent a pair of-D quantum-mechanical model for charge distribution in cylindrical gate-all-around devices with computation of the gate tunneling current. The validity of 1-D approximations for the charge and therefore the gate current is mentioned, assessing the validity of a previously proposed analytical approximation for the tunneling current within the Fowler-Nordheim regime.
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