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Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices

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PROJECT TITLE :

Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices

ABSTRACT :

We have a tendency to gift a self-consistent a pair of-D quantum-mechanical model for charge distribution in cylindrical gate-all-around devices with computation of the gate tunneling current. The validity of 1-D approximations for the charge and therefore the gate current is mentioned, assessing the validity of a previously proposed analytical approximation for the tunneling current within the Fowler-Nordheim regime.


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Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices - 4.8 out of 5 based on 46 votes

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