Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate


We have a tendency to demonstrate high-performance silicon-nanowire gate-all-around MOSFETs (GAA SNWFETs) fabricated on bulk Si by a unique prime-down complementary MOS-compatible technique. The fabricated n- and p-type GAA SNWFETs of $sim$50-nm gate length and of $sim$half dozen-nm diameter show superior device performance, i.e., driving capability of $hbox2.6 times hbox10^3/hbox2.9 times hbox10^3 muhboxA/mu hboxm$ at $vert V_Dvert = vert V_G - V_tvert = hbox1.0 hboxV$, $I_rm on/I_rm off$ ratio as high as $hbox5 times hbox10^8/hbox10^9$, and glorious short-channel-impact immunity with subthreshold slope of 67/sixty four mV/dec and drain-induced barrier lowering of vi mV/V, respectively. GAA SNWFETs and FinFETs fabricated on bulk Si were conjointly compared by the investigation of both experiments and Technology Computer Aided Design simulation. The superiority of GAA SNWFETs over FinFETs is evidenced during this paper.

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