PROJECT TITLE :
Denser and More Stable SRAM Using FinFETs With Multiple Fin Heights
We gift the optimization of multiple-fin-height FinFET static random access memory (SRAM) to cut back cell leakage and improve the soundness and density of SRAM. Employing a taller fin FinFET for the pull-down device will increase the scan static noise margin of the SRAM and will probably scale back the SRAM cell space. A cheap quantity of channel doping in all the transistors will be used to scale back the cell leakage current while not appreciably degrading the soundness of the SRAM cell. Increasing the channel doping of the access transistor simultaneously improves the scan stability and reduces the cell leakage current of the SRAM cell.
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