PROJECT TITLE :
The Effects of Dual-Active-Layer Modulation on a Low-Temperature Solution-Processed Oxide Thin-Film Transistor
We applied dual-active-layer (DAL) modulation to answer-processed AlInZnO (AIZO)/InZnO (IZO) DAL thin-film transistors (TFTs) to appreciate high performance at 350 $^circhboxC$. The electrical characteristics of the DAL TFTs were plagued by the In-versus-Zn ratio of each channel and the thickness of the IZO. This caused a difference within the carrier concentrations of the two channels and also modified the energy barrier height at the junction between the channels. A DAL TFT with optimized carrier concentration and energy barrier height yielded a competitive field-result mobility of five.62 $hboxcm^2/hboxVcdothboxs$, a high on/off ratio of $hbox9.0 times hbox10^6$, and a steep subthreshold swing of 0.fifty three V/dec.
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