Equivalent Sheet Resistance of Intrinsic Noise in Sub-100-nm MOSFETs


This paper presents the equivalent sheet resistance for the intrinsic channel thermal noise of sub-100-nm MOSFETs for the first time. This newly outlined noise sheet resistance is particularly useful when comparing the noise performance of devices in several technology nodes for low-noise applications. Experimental results for devices in one hundred thirty-, ninety-, and sixty five-nm CMOS technology nodes are demonstrated. Strategies for the development of future low-noise technologies are steered.

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