A Distributed Bulk-Oxide Trap Model for $hbox_ hbox_$ InGaAs MOS Devices


This paper presents a distributed circuit model for bulk-oxide traps based mostly on tunneling between the semiconductor surface and lure states within the gate dielectric film. The model is analytically solved at dc. It is shown that the distributed bulk-oxide trap model correctly depicts the frequency dispersion in the capacitance– and conductance–voltage knowledge of $hboxAl_2 hboxO_3$–InGaAs MOS devices that do not work the conventional interface state model. The slope degradation or stretch-out of the measured capacitance–voltage curve close to flatband will be also explained by the distributed bulk-oxide entice model.

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