Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical Investigation


This paper presents a detailed simulation analysis of the impact of three-D electrostatics and atomistic doping on the variability of the random telegraph noise (RTN) time constants in nanoscale MOS devices. Results on a template decananometer Flash cell show that both the results contribute to a giant statistical dispersion of the capture/emission time constants of oxide traps placed at the same distance from the silicon surface, mainly thanks to nonuniform channel inversion. The statistical dispersion has an orders-of-magnitude increase when moving from the on-state to the subthreshold cell regimes and has major implications on the spectroscopic investigation of RTN traps, as can be mentioned in Part II of this work.

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