Interface-State Modeling of –InGaAs MOS From Depletion to Inversion


This paper presents a close analysis of the multifrequency capacitance–voltage and conductance–voltage knowledge of $hboxAl_2hboxO_3/hboxn-InGaAs$ MOS capacitors. It's shown that the widely varied frequency dependence of the information from depletion to inversion can be fitted to varied regional equivalent circuits derived from the complete interface-state model. In certain regions, incorporating bulk-oxide traps in the interface-state model enables higher fitting of knowledge. By calibrating the model with experimental information, the interface-state density and therefore the trap time constants are extracted as functions of energy in the bandgap, from that the stretch-out of gate voltage is set. It is concluded that the commonly observed decrease of the one-kHz capacitance toward stronger inversion is because of the increasing time constant for traps to capture majority carriers at the inverted surface.

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