Impact of Quantum Confinement on Backgate-Bias Modulated Threshold-Voltage and Subthreshold Characteristics for Ultra-Thin-Body GeOI MOSFETs


This paper investigates the impact of quantum confinement (QC) on the backgate-bias $(V_rm bg)$ modulated subthreshold and threshold-voltage $(V_rm th)$ characteristics of ultra-thin-body germanium-on-insulator (UTB GeOI) MOSFETs using an analytical answer of the Schrödinger equation verified with TCAD numerical simulation. Our study indicates that the QC impact reduces the sensitivity of the subthreshold swing to $V_rm bg$. In addition, the sensitivity of $V_rm th$ to $V_rm bg$ can be enhanced by the QC result notably for electrostatically well-behaved UTB MOSFETs with triangular potential well. Aside from that, the sensitivity of $V_rm th$ roll-off to $V_rm bg$ is reduced by the QC result. Since Ge and Si channels exhibit different degrees of QC thanks to totally different quantization effective mass, the impact of QC must be thought-about when one-to-one comparisons between GeOI and SOI MOSFETs regarding the backgate-bias modulated threshold-voltage and subthreshold characteristics are made. Our study could provide insights for multi- $V_rm th$ device/circuit styles using advanced UTB GeOI technologies.

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