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Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic Implications

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PROJECT TITLE :

Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic Implications

ABSTRACT :

This paper investigates the impact of 3-D electrostatics and atomistic doping on the spectroscopic analysis of random telegraph noise (RTN) traps in nanoscale MOS devices. Using the numerical model and the template decananometer Flash cell presented in Half I of this paper, the gate bias dependence of the capture and emission time constants of oxide traps is shown to largely depend on the trap position over the channel, each in the subthreshold and in the on-state regime. This compromises the accuracy of any one-D technique for entice spectroscopy based on the time constants analysis and, thanks to the randomness in entice position and dopant placement in the substrate, calls into question the likelihood for any accurate trap spectroscopy in nanoscale devices. Finally, the possibility to extract any information on the trap depth from the fluctuation amplitude of RTN waveforms is shown to be precluded by the massive statistical unfold of the amplitude itself, ensuing in its negligible correlation with the trap position in the oxide and with the waveform time constants.


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Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic Implications - 4.6 out of 5 based on 54 votes

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