Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs


This paper investigates the electrical performance enhancements induced by appropriate strain conditions in n-kind InAs nanowire tunnel FETs within the context of a scientific comparison with strained silicon MOSFETs. To the current purpose, we have a tendency to exploited a three-D simulator based on an eight-band $bf k cdot bf p$ Hamiltonian within the nonequilibrium Green perform formalism. Our model accounts for arbitrary crystal orientations and describes the strain implicitly by a modification of the band structure. The result of acoustic- and optical-phonon scattering is also accounted for within the self-consistent Born approximation. Our results show that applicable strain conditions in n-type InAs tunnel FETs induce a exceptional enhancement of $I_rm on$ with a little degradation of the subthreshold slope, as well as massive enhancements within the $I_rm off$ versus $I_rm on$ tradeoff for low $I_rm off$ and $V_rm DD$ values. Hence, an vital widening of the vary of $I_rm off$ and $V_rm DD$ values where tunnel FETs will compete with strained silicon MOSFETs is obtained.

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