PROJECT TITLE :
Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE
The versatility of solid-source molecular beam epitaxy for the growth of InP/InGaAs heterojunction bipolar transistors (HBTs) is provided by its excellent management of doping and composition grading profiles together with its potency for carbon doping. Numerous styles using doping grading or composition grading in the base are investigated to provide a designed-in quasi-electric field that enhances electron transport. All graded-base devices exhibit higher current gains $(beta)$, as compared to uniform-base structures, however the $beta$ enhancements are found to be nonproportional to the generated designed-in drift fields. The most effective performances are obtained with a 9percent linear composition grading profile. As compared to conventionally grown uniform-base structures, the linearly graded-base HBTs show higher current gains (up to forty twop.c), which is of specific importance notably in analog and mixed-signal applications.
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