Effect of Tunnel Recombination Junction on Crossover Between the Dark and Illuminated Current–Voltage Curves of Tandem Solar Cells


The tunnel recombination junction (TRJ) quality of an amorphous silicon (a-Si)-based mostly tandem junction solar cell will have a important impact on its performance, where crossover between the dark and illuminated current–voltage curves of a tandem cell indicates a TRJ with poor quality. Thus, it is essential to be able to perceive the TRJ characteristics so as to optimize the tandem solar cell performance. A simulation approach requiring a few knowledge points was used to quantify the TRJ quality. The uniform field collection model was changed to account for parasitic losses because of the TRJ, which are a voltage drop across the TRJ and a series resistance thanks to the TRJ. Simulation results using the TRJ model are in sensible agreement with experimental knowledge. The TRJ model can be a useful tool to assist within the optimization of a-Si-primarily based multijunction solar cells.

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