PROJECT TITLE :
Study of the Multistep-Deposited and UV-Ozone-Annealed HfZrO Gate Stack by Scanning Tunneling Microscopy and Pulse $C$– $V$ Measurement
The TiN/HfZrO/$hboxSiO_x$ gate stack fashioned via multistep deposition cum room-temperature ultraviolet-ozone (UVO) anneal was examined using scanning tunneling microscopy and pulse capacitance–voltage measurement, and therefore the results were compared with those of the as-deposited (as-dep) and speedy-thermal-annealed (RTA) samples. Evidence shows that a massive half of the advance seen within the multistep-deposited cum UVO-annealed sample, relative to the RTA sample, could be a direct consequence of suppressed crystallization of the HfZrO and, hence, a reduction within the density of grain-boundary-related defects. Compared with the as-dep sample, the observed improvement because of UVO annealing is marginal, though further improvement, ascribed to the elimination of oxygen-vacancy defects, may be achieved by either increasing the UVO anneal time when each deposition step or increasing the amount of deposition steps. This makes multistep deposition and UVO annealing viable for additional enhancing the robustness of the high-k gate dielectric in a very gate-last method.
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