PROJECT TITLE :
On the RF Power-Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOI
The radio frequency (RF) power-handling capability of forward- and inverse-mode diode-connected SiGe HBT RF switches fabricated on SOI is investigated. 2 sorts of n-p-n SiGe HBTs, every with a different collector doping profile, are utilized in the ON path of the RF switch. Measured results show that the inverse-mode switches outperform the forward-mode switches in each off-state insertion loss and power handling and compression characteristics. A framework for understanding the differences observed within the distortion performance of the forward- and inverse-mode SiGe HBT switches is developed.
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