Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory Cell


The need of high density, high speed, and reliable reminiscences is leading toward the event of new approaches like quantum-dot floating gates (QDFGs), use of high-$k$ dielectrics as tunneling/management gate oxides, and metal-gate technology. QDFG twenty two-nm Flash memory cells primarily based on these new approaches are investigated through process and device simulations using Synopsys Technology Pc-Aided Design tools. Hafnium oxide is used as both tunneling and management gate oxides along with the metal management gate. As a resolution to the nonuniform charging of QDFGs in these structures, asymmetric doping of the channel region is proposed. The impact of uneven channel doping on the charging behavior of QDFGs is studied, and therefore the device characteristics are compared with symmetric channel counterpart. The simulation results confirm that the uneven channel device is quicker in terms of programming and erasing time than the symmetric channel device.

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