Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)


The exponential miniaturization of Si complementary metal–oxide–semiconductor technology has been a key to the electronics revolution. But, the downscaling of the gate length becomes the most important challenge to maintain higher speed, lower power, and better electrostatic integrity for each following generation. Each industry and academia have been finding out new device architectures and materials to handle this challenge. In preparation for the 12-nm technology node, this paper assesses the performance of the $ hboxIn_0.75hboxGa_0.25hboxAs$ of III–V semiconductor compounds and strained-Si channel nanoscale transistors with identical dimensions. The impact of the channel material property and therefore the device architecture on the ultimate performance of ballistic transistors is theoretically analyzed. 2-dimensional and three-dimensional real-house ballistic quantum transport models are used with band structure nonparabolicity. The simulation results indicate three conclusions: 1) the $hboxIn_0.75 hboxGa_0.25hboxAs$ FETs don't outperform strained-Si FETs; 2) triple-gate Fin-shaped Field Effect Transistor (FinFET) surely represent the best architecture for sub-fifteen-nm gate contacts, independently from the material selection; and 3) the simulations results any show that the device performance is terribly strongly influenced by the source and drain resistances.

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