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Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme

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PROJECT TITLE :

Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme

ABSTRACT :

The applicability of a partitioned-charge-based non-quasi-static (NQS) model is investigated using exact solutions for 1-D bipolar transistors. Limitations of the model to accurately predict $y_21(omega)$ are overcome by further delaying the partitioned minority charge related to the collector. A corresponding tiny-signal time-domain model is derived. The proposed model effectively includes the delays inside each the quasi-neutral base and base–collector house-charge regions. Using solely two extra nodes over the quasi-static bipolar transistor model HICUM, the NQS model is implemented using Verilog-A. The simplicity of the model yields straightforward parameter extraction techniques. Modeling results show excellent agreement with numerically simulated data.


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Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning Scheme - 4.8 out of 5 based on 49 votes

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