Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling


Resistive-switching memory (RRAM) based mostly on transition metal oxides is a potential candidate for replacing Flash and dynamic random access memory in future generation nodes. Though terribly promising from the standpoints of scalability and technology, RRAM still has severe drawbacks in terms of understanding and modeling of the resistive-switching mechanism. This paper addresses the modeling of resistive switching in bipolar metal-oxide RRAMs. Reset and set processes are described in terms of voltage-driven ion migration among a conductive filament generated by electroforming. Ion migration is modeled by drift–diffusion equations with Arrhenius-activated diffusivity and mobility. The local temperature and field are derived from the self-consistent solution of carrier and warmth conduction equations in a very 3-D axis-symmetric geometry. The model accounts for set–reset characteristics, properly describing the abrupt set and gradual reset transitions and allowing scaling projections for metal-oxide RRAM.

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