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Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

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PROJECT TITLE :

Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

ABSTRACT :

Resistive switching behavior of partially anodized aluminum skinny film has been investigated at temperatures of twenty five $^circhboxC$–250 $^circhboxC$. Both the reset and set voltages decrease with increasing temperature, showing Arrhenius-like dependence with tiny activation energies. The heartbeat voltage experiment conjointly suggests that the conductive filament breaking/reconnection is less complicated to occur at a better temperature. Some doable mechanisms for the phenomena are mentioned. On the other hand, at elevated temperatures without continuous electrical field applied, while the high-resistance state exhibits no vital change with time, the low-resistance state (LRS) shows an eternal degradation, and there is a sudden failure. The LRS failure time shows Arrhenius dependence with an activation energy of $sim$1.3 eV, suggesting that the LRS failure could be thanks to the migration of the excess Al atoms at high temperatures.


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Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures - 4.8 out of 5 based on 49 votes

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